Abstract

We report about a process that enables us to manufacture nm-sized structures that are characterized in a four-point resistivity measurement. To define the nanostructures, we employ either a lift-off deposition process or a dry etching process. With the lift-off deposition, we were able to define line widths below 15 nm spatial dimension. The same technique allowed the fabrication of a current-carrying bridge with ≈30 nm × 10 nm cross section. The etch-process step allowed us to generate a superconducting meander structure covering an area of ≈13.5 μm × 10.5 μm. We also present critical-current measurements vs. temperature on sub-μm and μm sized bridges prepared by a different technique. These data support the idea of a geometrical edge barrier for vortex entry into sub-μm wide bridges.