Permanent URL to this publication: http://dx.doi.org/10.5167/uzh-10395
Ilin, K; Schneider, R; Gerthsen, D; Engel, A; Bartolf, H; Schilling, A; Semenov, A; Huebers, H W; Freitag, B; Siegel, M (2008). Ultra-thin NbN films on Si: crystalline and superconducting properties. Journal of Physics: Conference Series, 97:012045.
We present results on superconducting and crystalline properties of NbN films with a thickness smaller than 10 nm. The films were deposited using reactive magnetron sputtering on heated silicon substrates. Zero resistance critical temperatures of about 9 K have been measured for films with a thickness of about 5 nm and reaches values approx12 K for 10 nm thick films. A value of the superconducting coherence length of about 4 nm was estimated from the measurements of the second critical magnetic field. High-resolution transmission electron microscopy accompanied with electron-spectroscopy techniques was used to analyze the structure, thickness, and film-substrate interface of fabricated films. The interrelations between fabrication conditions, superconducting and crystalline properties of NbN films on Si substrates are presented and discussed.
|Item Type:||Journal Article, not refereed, original work|
|Communities & Collections:||07 Faculty of Science > Physics Institute|
|Deposited On:||09 Feb 2009 17:40|
|Last Modified:||28 Nov 2013 02:44|
|Publisher:||Institute of Physics Publishing|
|Citations:||Web of Science®. Times cited: 10|
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