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Permanent URL to this publication: http://dx.doi.org/10.5167/uzh-45693

Zhang, H G; Hu, H; Pan, Y; Mao, J H; Gao, M; Guo, H M; Du, S X; Greber, T; Gao, H J (2010). Graphene based quantum dots. Journal of Physics: Condensed Matter, 22(30):302001.

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Abstract

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

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Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
DDC:530 Physics
Language:English
Date:2010
Deposited On:15 Feb 2011 20:15
Last Modified:21 Dec 2013 03:47
Publisher:Institute of Physics Publishing
ISSN:0953-8984
Additional Information:This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at 10.1088/0953-8984/22/30/302001
Publisher DOI:10.1088/0953-8984/22/30/302001
Related URLs:http://arxiv.org/abs/0911.4024

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