Permanent URL to this publication: http://dx.doi.org/10.5167/uzh-49869
Tsujino, S; Helfenstein, P; Kirk, E; Vogel, T; Escher, C; Fink, H-W (2010). Field-emission characteristics of molded molybdenum nanotip arrays with stacked collimation gate electrodes. IEEE Electron Device Letters, 31(9):1059-1061.
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Abstract
Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of ~1 mA from 40 × 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications
| Item Type: | Journal Article, refereed, original work |
|---|---|
| Communities & Collections: | 07 Faculty of Science > Physics Institute |
| DDC: | 530 Physics |
| Language: | English |
| Date: | 2010 |
| Deposited On: | 12 Oct 2011 14:43 |
| Last Modified: | 24 Nov 2012 00:55 |
| Publisher: | IEEE |
| ISSN: | 0741-3106 |
| Additional Information: | 2011 © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Publisher DOI: | 10.1109/LED.2010.2052013 |
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