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Permanent URL to this publication: http://dx.doi.org/10.5167/uzh-49869

Tsujino, S; Helfenstein, P; Kirk, E; Vogel, T; Escher, C; Fink, H-W (2010). Field-emission characteristics of molded molybdenum nanotip arrays with stacked collimation gate electrodes. IEEE Electron Device Letters, 31(9):1059-1061.

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Abstract

Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of ~1 mA from 40 × 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications

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11 citations in Web of Science®
12 citations in Scopus®
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Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
DDC:530 Physics
Language:English
Date:2010
Deposited On:12 Oct 2011 12:43
Last Modified:10 Dec 2013 17:08
Publisher:IEEE
ISSN:0741-3106
Additional Information:2011 © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publisher DOI:10.1109/LED.2010.2052013

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