UZH-Logo

Maintenance Infos

Atom-specific spin mapping and buried topological states in a homologous series of topological insulators


Eremeev, S V; Landolt, G; Menshchikova, T V; Slomski, B; Koroteev, Y M; Aliev, Z S; Babanly, M B; Henk, J; Ernst, A; Patthey, L; Eich, A; Khajetoorians, A A; Hagemeister, J; Pietzsch, O; Wiebe, J; Wiesendanger, R; Echenique, P M; Tsirkin, S S; Amiraslanov, I R; Dil, J H; Chulkov, E V (2012). Atom-specific spin mapping and buried topological states in a homologous series of topological insulators. Nature Communications, 3:635.

Abstract

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.

Abstract

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.

Citations

99 citations in Web of Science®
94 citations in Scopus®
Google Scholar™

Altmetrics

Downloads

165 downloads since deposited on 02 Feb 2012
24 downloads since 12 months
Detailed statistics

Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:2012
Deposited On:02 Feb 2012 20:19
Last Modified:05 Apr 2016 15:30
Publisher:Nature Publishing Group
ISSN:2041-1723 (E)
Publisher DOI:https://doi.org/10.1038/ncomms1638
PubMed ID:22273673

Download

[img]
Preview
Content: Accepted Version
Filetype: PDF
Size: 1MB
View at publisher

TrendTerms

TrendTerms displays relevant terms of the abstract of this publication and related documents on a map. The terms and their relations were extracted from ZORA using word statistics. Their timelines are taken from ZORA as well. The bubble size of a term is proportional to the number of documents where the term occurs. Red, orange, yellow and green colors are used for terms that occur in the current document; red indicates high interlinkedness of a term with other terms, orange, yellow and green decreasing interlinkedness. Blue is used for terms that have a relation with the terms in this document, but occur in other documents.
You can navigate and zoom the map. Mouse-hovering a term displays its timeline, clicking it yields the associated documents.

Author Collaborations