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Large area arrays of metal nanowires


Auzelyte, V; Solak, H H; Ekinci, Y; MacKenzie, R; Vörös, J; Olliges, S; Spolenak, R (2008). Large area arrays of metal nanowires. Microelectronic Engineering, 85(5-6):1131-1134.

Abstract

We present novel modified lift-off processes for the fabrication of large-area, uniform metal nanowire arrays. In all processes, dense line arrays with periods in the 50–100 nm range were obtained in photoresist films with Extreme Ultraviolet Interference Lithography (EUV-IL). The critical problem of preparing lift-off masks with a negative resist profile is solved by the use of either a bilayer resist stack of HSQ/PMMA or deposition of a metal layer at oblique angles on top of the patterned resist lines. As an added benefit, the metal deposition step enables fine-tuning of the width of the nanowires. Using the developed processes, Au and Cr nanowires with 8 nm–70 nm linewidth were obtained.

We present novel modified lift-off processes for the fabrication of large-area, uniform metal nanowire arrays. In all processes, dense line arrays with periods in the 50–100 nm range were obtained in photoresist films with Extreme Ultraviolet Interference Lithography (EUV-IL). The critical problem of preparing lift-off masks with a negative resist profile is solved by the use of either a bilayer resist stack of HSQ/PMMA or deposition of a metal layer at oblique angles on top of the patterned resist lines. As an added benefit, the metal deposition step enables fine-tuning of the width of the nanowires. Using the developed processes, Au and Cr nanowires with 8 nm–70 nm linewidth were obtained.

Citations

24 citations in Web of Science®
26 citations in Scopus®
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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:04 Faculty of Medicine > Institute of Biomedical Engineering
Dewey Decimal Classification:170 Ethics
610 Medicine & health
Language:English
Date:2008
Deposited On:06 Jan 2009 11:57
Last Modified:05 Apr 2016 12:42
Publisher:Elsevier
ISSN:0167-9317
Publisher DOI:10.1016/j.mee.2008.01.064
Other Identification Number:

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