Header

UZH-Logo

Maintenance Infos

OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications


Mayr, C; Schultz, M; Noack, M; Henker, S; Partzsch, J; Schuffny, R (2014). OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications. Quantitative Biology. Neurons and Cognition 1409.0171, Institute of Neuroinformatics.

Abstract

Generating an exponential decay function with a time constant on the order of hundreds of milliseconds is a mainstay for neuromorphic circuits. Usually, either subthreshold circuits or RC-decays based on transconductance amplifiers are used. In the latter case, transconductances in the 10 pS range are needed. However, state-of-the-art low-transconductance amplifiers still require too much circuit area to be applicable in neuromorphic circuits where >100 of these time constant circuits may be required on a single chip. We present a silicon verified operational transconductance amplifier that achieves a gm of 5 pS in only 700 {mu}m2, a factor of 10-100 less area than current examples. This allows a high-density integration of time constant circuits in target appliations such as synaptic learning or as driving circuit for neuromorphic memristor arrays.

Abstract

Generating an exponential decay function with a time constant on the order of hundreds of milliseconds is a mainstay for neuromorphic circuits. Usually, either subthreshold circuits or RC-decays based on transconductance amplifiers are used. In the latter case, transconductances in the 10 pS range are needed. However, state-of-the-art low-transconductance amplifiers still require too much circuit area to be applicable in neuromorphic circuits where >100 of these time constant circuits may be required on a single chip. We present a silicon verified operational transconductance amplifier that achieves a gm of 5 pS in only 700 {mu}m2, a factor of 10-100 less area than current examples. This allows a high-density integration of time constant circuits in target appliations such as synaptic learning or as driving circuit for neuromorphic memristor arrays.

Statistics

Downloads

47 downloads since deposited on 25 Feb 2015
8 downloads since 12 months
Detailed statistics

Additional indexing

Item Type:Working Paper
Communities & Collections:07 Faculty of Science > Institute of Neuroinformatics
Dewey Decimal Classification:570 Life sciences; biology
Language:English
Date:2014
Deposited On:25 Feb 2015 10:52
Last Modified:21 Nov 2017 17:48
Publisher:Arxiv - Quantitative Biology
Series Name:Quantitative Biology. Neurons and Cognition
Free access at:Official URL. An embargo period may apply.
Official URL:http://arxiv.org/abs/1409.0171

Download

Download PDF  'OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications'.
Preview
Filetype: PDF
Size: 319kB