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[mu]-1,2-Bis(diethylphosphino)ethane-[kappa]2P:P'-bis{[1,2-bis(diethylphosphino)ethane-[kappa]2P,P']trichloridonitrosyltungsten(II)}


Avramovic, N; Blacque, O; Schmalle, H W; Berke, H (2008). [mu]-1,2-Bis(diethylphosphino)ethane-[kappa]2P:P'-bis{[1,2-bis(diethylphosphino)ethane-[kappa]2P,P']trichloridonitrosyltungsten(II)}. Acta Crystallographica. Section E, Structure Reports Online, 64(2):M367-M368.

Abstract

The title binuclear compound, [W2Cl6(NO)2(C10H22P2)3], contains two W atoms which are bridged by a bis(diethylphosphino)ethane (depe) ligand. The seven-coordinated tungsten(II) centres display distorted pentagonal-bipyramidal geometries with trans nitrosyl and chloride ligands. The title molecule lies on a crystallographic inversion centre. The ethane group of the non-bridging depe ligand is positionally disordered, with site-occupancy factors of 0.63 and 0.37. In the crystal structure, the binuclear molecules are linked by weak intermolecular C-H...O and C-H...Cl interactions. In addition, weak intramolecular C-H...Cl interactions are also present.

Abstract

The title binuclear compound, [W2Cl6(NO)2(C10H22P2)3], contains two W atoms which are bridged by a bis(diethylphosphino)ethane (depe) ligand. The seven-coordinated tungsten(II) centres display distorted pentagonal-bipyramidal geometries with trans nitrosyl and chloride ligands. The title molecule lies on a crystallographic inversion centre. The ethane group of the non-bridging depe ligand is positionally disordered, with site-occupancy factors of 0.63 and 0.37. In the crystal structure, the binuclear molecules are linked by weak intermolecular C-H...O and C-H...Cl interactions. In addition, weak intramolecular C-H...Cl interactions are also present.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Department of Chemistry
Dewey Decimal Classification:540 Chemistry
Language:English
Date:February 2008
Deposited On:15 Feb 2009 12:20
Last Modified:05 Apr 2016 12:59
Publisher:Wiley-Blackwell
ISSN:1600-5368
Publisher DOI:https://doi.org/10.1107/S1600536808001141

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