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A measurement of the ionization efficiency of nuclear recoils in silicon


Abstract

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV . We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstructed using a measurement of the time of flight and scattering angle of the scattered neutron. The overall trend of the results of this work is well described by the theory of Lindhard et al. above 4 keV of recoil energy. Below this energy, the presented data shows a deviation from the model. The data indicates a faster drop than the theory prediction at low energies.

Abstract

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV . We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstructed using a measurement of the time of flight and scattering angle of the scattered neutron. The overall trend of the results of this work is well described by the theory of Lindhard et al. above 4 keV of recoil energy. Below this energy, the presented data shows a deviation from the model. The data indicates a faster drop than the theory prediction at low energies.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:2017
Deposited On:15 Feb 2018 13:37
Last Modified:19 Feb 2018 11:12
Publisher:IOP Publishing
ISSN:1748-0221
OA Status:Closed
Publisher DOI:https://doi.org/10.1088/1748-0221/12/06/P06014

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Embargo till: 2018-06-01