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Low energy μSR studies of semiconductor interfaces


Eshchenko, D G; Storchak, V G; Morenzoni, E; Prokscha, T; Suter, A; Liu, X; Furdyna, J K (2009). Low energy μSR studies of semiconductor interfaces. Physica B: Condensed Matter, 404(5-7):873-875.

Abstract

Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.

Abstract

Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:April 2009
Deposited On:24 Apr 2009 15:20
Last Modified:05 Apr 2016 13:13
Publisher:Elsevier
ISSN:0921-4526
Publisher DOI:https://doi.org/10.1016/j.physb.2008.11.148

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