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Irregular stacking sequence in the initial growth of ultrathin Rh films on Ru(0001)


He, Y; Seitsonen, A P; Over, H (2005). Irregular stacking sequence in the initial growth of ultrathin Rh films on Ru(0001). Physical Review. B, Condensed Matter and Materials Physics, 72(7):075432.

Abstract

Rhodium grows on single-crystal Ru(0001) surface initially layer by layer, adapting the in-plane lattice parameters of Ru(0001) (pseudomorphic growth). Using quantitative low-energy electron diffraction (LEED) and density functional theory (DFT) calculations, we determined the atomic structures of 1-monolayer (ML), 2-ML, and 3-ML Rh films on Ru(0001). The 1-ML Rh film continues the hexagonal-close-packed (hcp) stacking sequence of Ru(0001) (...ABAb), while the 2-ML Rh film already adopts its face-centered-cubic (fcc) stacking sequence (...ABAbc) if the topmost Ru layer is included into the stacking consideration. Three MLs of Rh form a fcc stacking sequence of ...ABAbac, requiring a massive restructuring of the second Rh layer when adding one ML of Rh onto the 2-ML Rh film.

Abstract

Rhodium grows on single-crystal Ru(0001) surface initially layer by layer, adapting the in-plane lattice parameters of Ru(0001) (pseudomorphic growth). Using quantitative low-energy electron diffraction (LEED) and density functional theory (DFT) calculations, we determined the atomic structures of 1-monolayer (ML), 2-ML, and 3-ML Rh films on Ru(0001). The 1-ML Rh film continues the hexagonal-close-packed (hcp) stacking sequence of Ru(0001) (...ABAb), while the 2-ML Rh film already adopts its face-centered-cubic (fcc) stacking sequence (...ABAbc) if the topmost Ru layer is included into the stacking consideration. Three MLs of Rh form a fcc stacking sequence of ...ABAbac, requiring a massive restructuring of the second Rh layer when adding one ML of Rh onto the 2-ML Rh film.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Department of Chemistry
Dewey Decimal Classification:540 Chemistry
Language:English
Date:2005
Deposited On:26 Mar 2009 19:10
Last Modified:06 Dec 2017 14:14
Publisher:American Physical Society
ISSN:1098-0121
Publisher DOI:https://doi.org/10.1103/PhysRevB.72.075432

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