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Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication


Bartolf, H; Inderbitzin, K; Gómez, L B; Engel, A; Schilling, A (2010). Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication. Journal of Micromechanics and Microengineering, 20(12):125015.

Abstract

We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the sub-100 nm regime. The devices were fabricated by the application of an intrinsic proximity-effect suppression procedure which makes the need for an elaborated correction algorithm redundant for planar design layouts which are orders of magnitude smaller than the backscattering length. In addition, we discuss the necessary considerations for extending the fabrication spatial scale of optical contact-lithography with a mercury arc-discharge photon source down to the order of the exposure photon’s wavelength (sub-μm), thereby minimizing the writing time on the electron-beam lithograph. Finally we developed a unique and novel technique for controlling the undercut during a planar lift-off fabrication procedure without cleaving the wafer.

Abstract

We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the sub-100 nm regime. The devices were fabricated by the application of an intrinsic proximity-effect suppression procedure which makes the need for an elaborated correction algorithm redundant for planar design layouts which are orders of magnitude smaller than the backscattering length. In addition, we discuss the necessary considerations for extending the fabrication spatial scale of optical contact-lithography with a mercury arc-discharge photon source down to the order of the exposure photon’s wavelength (sub-μm), thereby minimizing the writing time on the electron-beam lithograph. Finally we developed a unique and novel technique for controlling the undercut during a planar lift-off fabrication procedure without cleaving the wafer.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:2010
Deposited On:20 Jan 2011 16:30
Last Modified:07 Dec 2017 06:00
Publisher:Institute of Physics Publishing
ISSN:0960-1317
Free access at:Publisher DOI. An embargo period may apply.
Publisher DOI:https://doi.org/10.1088/0960-1317/20/12/125015

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