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Synthesis of epitaxial graphene on rhodium from 3-pentanone


Roth, S; Greber, T; Osterwalder, J (2011). Synthesis of epitaxial graphene on rhodium from 3-pentanone. Surface Science Letters, 605(9-10):L17-L19.

Abstract

The synthesis of high quality single layer graphene on rhodium, g/Rh(111), is reported. The graphene layers are grown at 1060 K by low pressure chemical vapor deposition (CVD) using 3-pentanone as a precursor molecule. The presented growth technique shows an easy high quality production method for epitaxial graphene monolayers. The chemical composition and structural properties of such self-assembled monolayers were characterised by x- ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Scanning Tunneling Microscopy (STM) confirms the formation of a 3 nm super cell and a unique surface morphology which establishes the potential of g/Rh(111) as a template for molecules.

Abstract

The synthesis of high quality single layer graphene on rhodium, g/Rh(111), is reported. The graphene layers are grown at 1060 K by low pressure chemical vapor deposition (CVD) using 3-pentanone as a precursor molecule. The presented growth technique shows an easy high quality production method for epitaxial graphene monolayers. The chemical composition and structural properties of such self-assembled monolayers were characterised by x- ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Scanning Tunneling Microscopy (STM) confirms the formation of a 3 nm super cell and a unique surface morphology which establishes the potential of g/Rh(111) as a template for molecules.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:2011
Deposited On:19 Aug 2011 12:17
Last Modified:05 Apr 2016 14:58
Publisher:Elsevier
ISSN:0039-6028
Publisher DOI:https://doi.org/10.1016/j.susc.2011.02.007

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