Atom-specific spin mapping and buried topological states in a homologous series of topological insulators

Eremeev, S V; Landolt, G; Menshchikova, T V; Slomski, B; Koroteev, Y M; Aliev, Z S; Babanly, M B; Henk, J; Ernst, A; Patthey, L; Eich, A; Khajetoorians, A A; Hagemeister, J; Pietzsch, O; Wiebe, J; Wiesendanger, R; Echenique, P M; Tsirkin, S S; Amiraslanov, I R; Dil, J H; Chulkov, E V (2012). Atom-specific spin mapping and buried topological states in a homologous series of topological insulators. Nature Communications, 3:635.

Abstract

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.

Abstract

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.

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