Publication: Separating the bulk and surface n- to p-type transition in the topological insulator GeBi_{4−x}Sb_{x}Te_{7}
Separating the bulk and surface n- to p-type transition in the topological insulator GeBi_{4−x}Sb_{x}Te_{7}
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Muff, S., von Rohr, F., Landolt, G., Slomski, B., Schilling, A., Cava, R. J., Osterwalder, J., & Dil, J. H. (2013). Separating the bulk and surface n- to p-type transition in the topological insulator GeBi_{4−x}Sb_{x}Te_{7}. Physical Review. B, Condensed Matter and Materials Physics, 88(3), 035407. https://doi.org/10.1103/PhysRevB.88.035407
Abstract
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We identify the multilayered compound GeBi4Te7 to be a topological insulator with a Dirac point slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisfies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi4−xSbxTe7 we observe a transition from n to p type in bulk sensitive Seebeck coefficient measurements at a doping of x=0.6. In surface sensitive ARPES measurements a rigid band shift is
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- Muff, Stefan
- von Rohr, Fabian
- Landolt, Gabriel
- Slomski, Bartosz
- Schilling, Andreas
- Cava, Robert J
- Osterwalder, Jürg
- Dil, J Hugo
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Muff, S., von Rohr, F., Landolt, G., Slomski, B., Schilling, A., Cava, R. J., Osterwalder, J., & Dil, J. H. (2013). Separating the bulk and surface n- to p-type transition in the topological insulator GeBi_{4−x}Sb_{x}Te_{7}. Physical Review. B, Condensed Matter and Materials Physics, 88(3), 035407. https://doi.org/10.1103/PhysRevB.88.035407
