Large Tuning of Electroresistance in an Electromagnetic Device Structure Based on the Ferromagnetic–Piezoelectric Interface

Abstract

The electrical control of the conducting state through phase transition and/or resistivity switching in heterostructures of strongly correlated oxides is at the core of the large on-going research activity of fundamental and applied interest. In an electromechanical device made of a ferromagnetic–piezoelectric heterostructure, we observe an anomalous negative electroresistance of ∼−282% and a significant tuning of the metal-to-insulator transition temperature when an electric field is applied across the piezoelectric. Supported by fin Show more