Publication: Accelerated Recombination Reaction through Interfacial FeIV=O Accumulation on Photoanode Surfaces
Accelerated Recombination Reaction through Interfacial FeIV=O Accumulation on Photoanode Surfaces
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Li, J., Chen, H., Liu, S., Wang, Y., Wan, W., Zhao, Y., Triana, C. A., Xu, Z., & Patzke, G. R. (2025). Accelerated Recombination Reaction through Interfacial FeIV=O Accumulation on Photoanode Surfaces. Journal of the American Chemical Society, 147(25), 21492–21500. https://doi.org/10.1021/jacs.5c02231
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The observation of third-order water oxidation kinetics by accumulation at the semiconductor-electrolyte interface is a milestone for understanding the four-electron transfer reaction mechanism. However, the consequences of such accumulation for the associated recombination reaction kinetics at the interface have not been fully explored so far. Here, we observe fast second-order recombination reaction kinetics for as the result of its accumulation at the model hematite-electrolyte interface, compared to the first-order recombination r
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Li, J., Chen, H., Liu, S., Wang, Y., Wan, W., Zhao, Y., Triana, C. A., Xu, Z., & Patzke, G. R. (2025). Accelerated Recombination Reaction through Interfacial FeIV=O Accumulation on Photoanode Surfaces. Journal of the American Chemical Society, 147(25), 21492–21500. https://doi.org/10.1021/jacs.5c02231