Publication: High-pressure muon spin rotation studies of magnetic semiconductors: EuS
High-pressure muon spin rotation studies of magnetic semiconductors: EuS
Date
Date
Date
Citations
Eshchenko, D. G., Storchak, V. G., Morenzoni, E., & Andreica, D. (2009). High-pressure muon spin rotation studies of magnetic semiconductors: EuS. Physica B: Condensed Matter, 404(5–7), 903–905. https://doi.org/10.1016/j.physb.2008.11.140
Abstract
Abstract
Abstract
Muon spin relaxation studies under hydrostatic pressure up to 15 kbar have been carried out in EuS. In the ferromagnetic state, the internal magnetic field Bμ seen by the muon is found to be extremely sensitive to pressure with relative change of order d ln(B)/dp~1.2%/kbar.
Additional indexing
Creators (Authors)
- Eshchenko, D G
- Storchak, V G
- Morenzoni, E
- Andreica, D
Volume
Volume
Volume
Number
Number
Number
Page range/Item number
Page range/Item number
Page range/Item number
Page end
Page end
Page end
Item Type
Item Type
Item Type
In collections
Language
Language
Language
Publication date
Publication date
Publication date
Date available
Date available
Date available
ISSN or e-ISSN
ISSN or e-ISSN
ISSN or e-ISSN
OA Status
OA Status
OA Status
Publisher DOI
Citations
Eshchenko, D. G., Storchak, V. G., Morenzoni, E., & Andreica, D. (2009). High-pressure muon spin rotation studies of magnetic semiconductors: EuS. Physica B: Condensed Matter, 404(5–7), 903–905. https://doi.org/10.1016/j.physb.2008.11.140
