Publication: Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111)
Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111)
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Roth, S., Matsui, F., Greber, T., & Osterwalder, J. (2013). Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111). Nano Letters, 13(6), 2668–2675. https://doi.org/10.1021/nl400815w
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Two limiting factors for a new technology of graphene-based electronic devices are the difficulty of growing large areas of defect-free material and the integration of graphene with an atomically flat and insulating substrate material. Chemical vapor deposition (CVD) on metal surfaces, in particular on copper, may offer a solution to the first problem, while hexagonal boron nitride (h-BN) has been identified as an ideal insulating substrate material. The bottom-up growth of graphene/h-BN stacks on copper surfaces appears therefore as
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- Roth, Silvan
- Matsui, Fumihiko
- Greber, Thomas
- Osterwalder, Jürg
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Roth, S., Matsui, F., Greber, T., & Osterwalder, J. (2013). Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111). Nano Letters, 13(6), 2668–2675. https://doi.org/10.1021/nl400815w
