Publication: Exploiting memristive BiFeO3 bilayer structures for compact sequential logics
Exploiting memristive BiFeO3 bilayer structures for compact sequential logics
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You, T., Shuai, Y., Luo, W., Du, N., Bürger, D., Skorupa, I., Hübner, R., Henker, S., Mayr, C., Schüffny, R., Mikolajick, T., & Schmidt, H. (2014). Exploiting memristive BiFeO3 bilayer structures for compact sequential logics. Advanced Functional Materials, 24(22), 3357–3365. https://doi.org/10.1002/adfm.201303365
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Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, BiFeO3:Ti/BiFeO3 (BFTO/BFO) bilayer structures with optimized BFTO/BFO thickness ratio which show symmetric, bipolar, and nonvolatile resistive switching with good retention and endurance performance, are presented. The resistive switching mechanism is understood by a model of flexible top and bottom Schottky-like barrier heights in the BFTO/BFO bilayer structures. The r
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- You, Tiangui
- Shuai, Yao
- Luo, Wenbo
- Du, Nan
- Bürger, Danilo
- Skorupa, Ilona
- Hübner, René
- Henker, Stephan
- Mayr, Christian
- Schüffny, René
- Mikolajick, Thomas
- Schmidt, Heidemarie
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You, T., Shuai, Y., Luo, W., Du, N., Bürger, D., Skorupa, I., Hübner, R., Henker, S., Mayr, C., Schüffny, R., Mikolajick, T., & Schmidt, H. (2014). Exploiting memristive BiFeO3 bilayer structures for compact sequential logics. Advanced Functional Materials, 24(22), 3357–3365. https://doi.org/10.1002/adfm.201303365