Publication: Implantation length and thermal stability of interstitial Ar atoms in Boron Nitride Nanotents
Implantation length and thermal stability of interstitial Ar atoms in Boron Nitride Nanotents
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Cun, H., Iannuzzi, M., Hemmi, A., Osterwalder, J., & Greber, T. (2014). Implantation length and thermal stability of interstitial Ar atoms in Boron Nitride Nanotents. ACS Nano, 8(1), 1014–1021. https://doi.org/10.1021/nn405907a
Abstract
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Hyperthermal atoms may be implanted beneath single layers of graphene or hexagonal boron nitride (h-BN) on a substrate. For the case of h-BN on rhodium, which is a corrugated honeycomb superstructure with a periodicity of 3.2 nm, Ar atoms are implanted at distinct interstitial sites within the supercell, where the h-BN is weakly bound to the substrate. These peculiar structures are reminiscent of “nanotents” with an ultimately thin “rainfly”. Here we explore the implantation length (i.e., the distance the atoms move before they come t
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- Cun, Huanyao
- Hemmi, Adrian
- Osterwalder, Jürg
- Greber, Thomas
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Citations
Cun, H., Iannuzzi, M., Hemmi, A., Osterwalder, J., & Greber, T. (2014). Implantation length and thermal stability of interstitial Ar atoms in Boron Nitride Nanotents. ACS Nano, 8(1), 1014–1021. https://doi.org/10.1021/nn405907a
