Publication: Large area arrays of metal nanowires
Large area arrays of metal nanowires
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Auzelyte, V., Solak, H. H., Ekinci, Y., MacKenzie, R., Vörös, J., Olliges, S., & Spolenak, R. (2008). Large area arrays of metal nanowires. Microelectronic Engineering, 85(5–6), 1131–1134. https://doi.org/10.1016/j.mee.2008.01.064
Abstract
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Abstract
We present novel modified lift-off processes for the fabrication of large-area, uniform metal nanowire arrays. In all processes, dense line arrays with periods in the 50–100 nm range were obtained in photoresist films with Extreme Ultraviolet Interference Lithography (EUV-IL). The critical problem of preparing lift-off masks with a negative resist profile is solved by the use of either a bilayer resist stack of HSQ/PMMA or deposition of a metal layer at oblique angles on top of the patterned resist lines. As an added benefit, the meta
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- Auzelyte, V
- Solak, H H
- Ekinci, Y
- MacKenzie, R
- Vörös, J
- Olliges, S
- Spolenak, R
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Auzelyte, V., Solak, H. H., Ekinci, Y., MacKenzie, R., Vörös, J., Olliges, S., & Spolenak, R. (2008). Large area arrays of metal nanowires. Microelectronic Engineering, 85(5–6), 1131–1134. https://doi.org/10.1016/j.mee.2008.01.064