# Characteristics of superconducting tungsten silicide $W_{x}Si_{1−x}$ for single photon detection

Zhang, X; Engel, A; Wang, Q; Schilling, A; Semenov, A; Sidorova, M; Hübers, H-W; Charaev, I; Ilin, K; Siegel, M (2016). Characteristics of superconducting tungsten silicide $W_{x}Si_{1−x}$ for single photon detection. Physical Review B, 94(17):174509.

## Abstract

Superconducting properties of three series of amorphous $W_{x}Si_{1−x}$ films with different thickness and stoichiometry were investigated by dc transport measurements in a magnetic field up to 9 T. These amorphous $W_{x}Si_{1−x}$ films were deposited by magnetron cosputtering of the elemental source targets onto silicon substrates at room temperature and patterned in the form of bridges by optical lithography and reactive ion etching. Analysis of the data on magnetoconductivity allowed us to extract the critical temperatures, superconducting coherence lengths, magnetic penetration depths, and diffusion constants of electrons in the normal state as functions of film thickness for each stoichiometry. Two basic time constants were derived from transport and time-resolving measurements. A dynamic process of the formation of a hotspot was analyzed in the framework of a diffusion-based vortex-entry model. We used a two-stage diffusion approach and defined a hotspot size by assuming that the quasiparticles and normal-state electrons have the same diffusion constant. With this definition and these measured material parameters, the hotspot in the 5-nm-thick $W_{0.85}Si_{0.15}$ film had a diameter of 107 nm at the peak of the number of nonequilibrium quasiparticles.

## Abstract

Superconducting properties of three series of amorphous $W_{x}Si_{1−x}$ films with different thickness and stoichiometry were investigated by dc transport measurements in a magnetic field up to 9 T. These amorphous $W_{x}Si_{1−x}$ films were deposited by magnetron cosputtering of the elemental source targets onto silicon substrates at room temperature and patterned in the form of bridges by optical lithography and reactive ion etching. Analysis of the data on magnetoconductivity allowed us to extract the critical temperatures, superconducting coherence lengths, magnetic penetration depths, and diffusion constants of electrons in the normal state as functions of film thickness for each stoichiometry. Two basic time constants were derived from transport and time-resolving measurements. A dynamic process of the formation of a hotspot was analyzed in the framework of a diffusion-based vortex-entry model. We used a two-stage diffusion approach and defined a hotspot size by assuming that the quasiparticles and normal-state electrons have the same diffusion constant. With this definition and these measured material parameters, the hotspot in the 5-nm-thick $W_{0.85}Si_{0.15}$ film had a diameter of 107 nm at the peak of the number of nonequilibrium quasiparticles.

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