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Centimeter-sized single-orientation monolayer hexagonal boron nitride with or without nanovoids


Cun, Huanyao; Hemmi, Adrian; Miniussi, Elisa; Bernard, Carlo; Probst, Benjamin; Liu, Ke; Alexander, Duncan T L; Kleibert, Armin; Mette, Gerson; Weinl, Michael; Schreck, Matthias; Osterwalder, Jürg; Radenovic, Aleksandra; Greber, Thomas (2018). Centimeter-sized single-orientation monolayer hexagonal boron nitride with or without nanovoids. Nano letters, 18(2):1205-1212.

Abstract

Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids. However, scalable production beyond exfoliation from bulk single crystals remained a major challenge. Single-orientation monolayer h-BN nanomesh is grown on 4 in. wafer single crystalline rhodium films and transferred on arbitrary substrates such as SiO2, germanium, or transmission electron microscopy grids. The transfer process involves application of tetraoctylammonium bromide before electrochemical hydrogen delamination. The material performance is demonstrated with two applications. First, protective sealing of h-BN is shown by preserving germanium from oxidation in air at high temperatures. Second, the membrane functionality of the single h-BN layer is demonstrated in aqueous solutions. Here, we employ a growth substrate intrinsic preparation scheme to create regular 2 nm holes that serve as ion channels in liquids.

Abstract

Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids. However, scalable production beyond exfoliation from bulk single crystals remained a major challenge. Single-orientation monolayer h-BN nanomesh is grown on 4 in. wafer single crystalline rhodium films and transferred on arbitrary substrates such as SiO2, germanium, or transmission electron microscopy grids. The transfer process involves application of tetraoctylammonium bromide before electrochemical hydrogen delamination. The material performance is demonstrated with two applications. First, protective sealing of h-BN is shown by preserving germanium from oxidation in air at high temperatures. Second, the membrane functionality of the single h-BN layer is demonstrated in aqueous solutions. Here, we employ a growth substrate intrinsic preparation scheme to create regular 2 nm holes that serve as ion channels in liquids.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Language:English
Date:2018
Deposited On:18 Apr 2018 14:26
Last Modified:09 Jan 2019 01:00
Publisher:American Chemical Society (ACS)
ISSN:1530-6984
Additional Information:This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see doi.org/10.1021/acs.nanolett.7b04752.
OA Status:Green
Publisher DOI:https://doi.org/10.1021/acs.nanolett.7b04752
Project Information:
  • : FunderFP7
  • : Grant ID604391
  • : Project TitleGRAPHENE - Graphene-Based Revolutions in ICT And Beyond

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