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Remote doping of graphene on SiO2 with 5 keV x-rays in air


Salzmann, Björn; Bernard, Carlo; Hemmi, Adrian; Greber, Thomas (2018). Remote doping of graphene on SiO2 with 5 keV x-rays in air. Journal of Vacuum Science & Technology A, 36(2):020603.

Abstract

The transport properties of graphene change strongly in the presence of electric fields due to graphene's band structure. This makes graphene sensitive to charges in an insulator substrate. Graphene on SiO2/Si is studied under x-ray irradiation in ambient conditions. Using the metal oxide semiconductor structure of their samples, the authors observe remote doping due to the creation of positive charges in the oxide by the irradiation and relate them to resistance and Hall effect measurements performed on the graphene gate. The observed changes in conductivity, Hall charge carrier density, and the corresponding charge carrier mobility are consistent with expectations as well as recent experiments using graphene field effect transistors under ultrahigh vacuum conditions [P. Procházka et al. Sci. Rep. 7, 563 (2017)]. Furthermore, the stability of the effect under ambient conditions and its recovery using thermal annealing is demonstrated.

Abstract

The transport properties of graphene change strongly in the presence of electric fields due to graphene's band structure. This makes graphene sensitive to charges in an insulator substrate. Graphene on SiO2/Si is studied under x-ray irradiation in ambient conditions. Using the metal oxide semiconductor structure of their samples, the authors observe remote doping due to the creation of positive charges in the oxide by the irradiation and relate them to resistance and Hall effect measurements performed on the graphene gate. The observed changes in conductivity, Hall charge carrier density, and the corresponding charge carrier mobility are consistent with expectations as well as recent experiments using graphene field effect transistors under ultrahigh vacuum conditions [P. Procházka et al. Sci. Rep. 7, 563 (2017)]. Furthermore, the stability of the effect under ambient conditions and its recovery using thermal annealing is demonstrated.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Scopus Subject Areas:Physical Sciences > Condensed Matter Physics
Physical Sciences > Surfaces and Interfaces
Physical Sciences > Surfaces, Coatings and Films
Language:English
Date:2018
Deposited On:18 Apr 2018 14:31
Last Modified:29 Jul 2020 07:09
Publisher:American Institute of Physics
ISSN:0734-2101
Additional Information:For published Version: Copyright (2018) AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Salzmann, Björn; Bernard, Carlo; Hemmi, Adrian; Greber, Thomas (2018). Remote doping of graphene on SiO2 with 5 keV x-rays in air. Journal of Vacuum Science & Technology A, 36(2):020603. and may be found at https://doi.org/10.1116/1.5013003.
OA Status:Green
Publisher DOI:https://doi.org/10.1116/1.5013003
Project Information:
  • : FunderSNSF
  • : Grant ID200020_153312
  • : Project TitleSurface physics with single-layer materials and molecular layers
  • : FunderH2020
  • : Grant ID696656
  • : Project TitleGrapheneCore1 - Graphene-based disruptive technologies

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