Header

UZH-Logo

Maintenance Infos

Gate voltage tuned quantum superconductor to insulator transition in an ultrathin bismuth film revisited


Schneider, T; Weyeneth, S (2013). Gate voltage tuned quantum superconductor to insulator transition in an ultrathin bismuth film revisited. Journal of Superconductivity and Novel Magnetism, 26(12):3423-3435.

Abstract

We explore the implications of Berezinskii-Kosterlitz-Thouless (BKT) critical behavior and variable-range hopping on the two-dimensional (2D) quantum superconductor-insulator (QSI) transition driven by tuning the gate voltage. To illustrate the potential and the implications of this scenario we analyze sheet resistance data of Parendo et al. taken on a gate voltage tuned ultrathin amorphous bismuth film. The finite size scaling analysis of the BKT-transition uncovers a limiting length L preventing the correlation length to diverge and to enter the critical regime deeply. Nevertheless the attained BKT critical regime reveals consistency with two parameter quantum scaling and an explicit quantum scaling function determined by the BKT correlation length. The two parameter scaling yields for the zero temperature critical exponents of the QSI-transition the estimates $z\overline{\nu }\simeq 3/2$ , z≃3 and $\overline{\nu} \simeq 1/2$ , revealing that hyperscaling is violated and in contrast to finite temperature disorder is relevant at zero temperature. Furthermore, $z\overline{\nu }\simeq 3/2$ is also consistent with the two variable quantum scaling form associated with a variable-range hopping controlled insulating ground state

Abstract

We explore the implications of Berezinskii-Kosterlitz-Thouless (BKT) critical behavior and variable-range hopping on the two-dimensional (2D) quantum superconductor-insulator (QSI) transition driven by tuning the gate voltage. To illustrate the potential and the implications of this scenario we analyze sheet resistance data of Parendo et al. taken on a gate voltage tuned ultrathin amorphous bismuth film. The finite size scaling analysis of the BKT-transition uncovers a limiting length L preventing the correlation length to diverge and to enter the critical regime deeply. Nevertheless the attained BKT critical regime reveals consistency with two parameter quantum scaling and an explicit quantum scaling function determined by the BKT correlation length. The two parameter scaling yields for the zero temperature critical exponents of the QSI-transition the estimates $z\overline{\nu }\simeq 3/2$ , z≃3 and $\overline{\nu} \simeq 1/2$ , revealing that hyperscaling is violated and in contrast to finite temperature disorder is relevant at zero temperature. Furthermore, $z\overline{\nu }\simeq 3/2$ is also consistent with the two variable quantum scaling form associated with a variable-range hopping controlled insulating ground state

Statistics

Citations

Dimensions.ai Metrics
1 citation in Web of Science®
1 citation in Scopus®
Google Scholar™

Altmetrics

Downloads

14 downloads since deposited on 21 Dec 2018
14 downloads since 12 months
Detailed statistics

Additional indexing

Item Type:Journal Article, not_refereed, original work
Communities & Collections:National licences > 142-005
Dewey Decimal Classification:530 Physics
Language:English
Date:1 December 2013
Deposited On:21 Dec 2018 16:15
Last Modified:22 Dec 2018 01:01
Publisher:Springer
ISSN:1557-1939
OA Status:Green
Publisher DOI:https://doi.org/10.1007/s10948-013-2245-x
Related URLs:https://www.swissbib.ch/Search/Results?lookfor=nationallicencespringer101007s109480132245x (Library Catalogue)

Download

Download PDF  'Gate voltage tuned quantum superconductor to insulator transition in an ultrathin bismuth film revisited'.
Preview
Content: Published Version
Language: English
Filetype: PDF (Nationallizenz 142-005)
Size: 912kB
View at publisher