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Bias Current Generators with Wide Dynamic Range


Delbrück, Tobi; van Schaik, André (2005). Bias Current Generators with Wide Dynamic Range. Analog Integrated Circuits and Signal Processing, 43(3):247-268.

Abstract

Mixed-signal or analog chips often require a wide range of biasing currents that are independent of process and supply voltage and that are proportional to absolute temperature. This paper describes CMOS circuits that we use to generate a set of fixed bias currents typically spanning six decades at room temperature down to a few times the transistor off-current. A bootstrapped current reference with a new startup and power-control mechanism generates a master current, which is successively divided by a current splitter to generate the desired reference currents. These references are nondestructively copied to form the chip's biases. Measurements of behavior, including temperature effects from 1.6 and 0.35 μ implementations, are presented and nonidealities are investigated. Temperature dependence of the transistor off-current is investigated because it determines the lower limit for generated currents. Readers are directed to a design kit that allows easy generation of the complete layout for a bias generator with a set of desired currents for scalable MOSIS CMOS processes

Abstract

Mixed-signal or analog chips often require a wide range of biasing currents that are independent of process and supply voltage and that are proportional to absolute temperature. This paper describes CMOS circuits that we use to generate a set of fixed bias currents typically spanning six decades at room temperature down to a few times the transistor off-current. A bootstrapped current reference with a new startup and power-control mechanism generates a master current, which is successively divided by a current splitter to generate the desired reference currents. These references are nondestructively copied to form the chip's biases. Measurements of behavior, including temperature effects from 1.6 and 0.35 μ implementations, are presented and nonidealities are investigated. Temperature dependence of the transistor off-current is investigated because it determines the lower limit for generated currents. Readers are directed to a design kit that allows easy generation of the complete layout for a bias generator with a set of desired currents for scalable MOSIS CMOS processes

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:National licences > 142-005
Dewey Decimal Classification:Unspecified
Scopus Subject Areas:Physical Sciences > Signal Processing
Physical Sciences > Hardware and Architecture
Physical Sciences > Surfaces, Coatings and Films
Language:English
Date:1 June 2005
Deposited On:03 Jul 2019 13:33
Last Modified:26 Jan 2022 18:25
Publisher:Springer
ISSN:0925-1030
OA Status:Green
Publisher DOI:https://doi.org/10.1007/s10470-005-1606-1
  • Content: Published Version
  • Language: English
  • Description: Nationallizenz 142-005