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Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)


Chen, Ming-Wei; Kim, HoKwon; Bernard, Carlo; Pizzochero, Michele; Zaldı́var, Javier; Pascual, Jose Ignacio; Ugeda, Miguel M; Yazyev, Oleg V; Greber, Thomas; Osterwalder, Jürg; Renault, Olivier; Kis, Andras (2018). Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111). ACS Nano, 12(11):11161-11168.

Abstract

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.

Abstract

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Scopus Subject Areas:Physical Sciences > General Materials Science
Physical Sciences > General Engineering
Physical Sciences > General Physics and Astronomy
Language:English
Date:27 November 2018
Deposited On:26 Apr 2019 13:52
Last Modified:08 Sep 2020 12:13
Publisher:American Chemical Society (ACS)
ISSN:1936-0851
Additional Information:This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.8b05628.
OA Status:Green
Publisher DOI:https://doi.org/10.1021/acsnano.8b05628
Project Information:
  • : FunderH2020
  • : Grant ID785219
  • : Project TitleGrapheneCore2 - Graphene Flagship Core Project 2
  • : FunderH2020
  • : Grant ID696656
  • : Project TitleGrapheneCore1 - Graphene-based disruptive technologies
  • : FunderFP7
  • : Grant ID240076
  • : Project TitleFLATRONICS - Electronic devices based on nanolayers

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