Header

UZH-Logo

Maintenance Infos

Low energy μSR studies of semiconductor interfaces


Eshchenko, D G; Storchak, V G; Morenzoni, E; Prokscha, T; Suter, A; Liu, X; Furdyna, J K (2009). Low energy μSR studies of semiconductor interfaces. Physica B: Condensed Matter, 404(5-7):873-875.

Abstract

Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.

Abstract

Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.

Statistics

Citations

Dimensions.ai Metrics
2 citations in Web of Science®
2 citations in Scopus®
Google Scholar™

Altmetrics

Downloads

2 downloads since deposited on 24 Apr 2009
0 downloads since 12 months
Detailed statistics

Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Scopus Subject Areas:Physical Sciences > Electronic, Optical and Magnetic Materials
Physical Sciences > Condensed Matter Physics
Physical Sciences > Electrical and Electronic Engineering
Language:English
Date:April 2009
Deposited On:24 Apr 2009 15:20
Last Modified:26 Jun 2022 14:42
Publisher:Elsevier
ISSN:0921-4526
OA Status:Closed
Publisher DOI:https://doi.org/10.1016/j.physb.2008.11.148