Eshchenko, D G; Storchak, V G; Morenzoni, E; Prokscha, T; Suter, A; Liu, X; Furdyna, J K (2009). Low energy μSR studies of semiconductor interfaces. Physica B: Condensed Matter, 404(5-7):873-875.
Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.
Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.
| Item Type: | Journal Article, refereed, original work |
|---|---|
| Communities & Collections: | 07 Faculty of Science > Physics Institute |
| Dewey Decimal Classification: | 530 Physics |
| Scopus Subject Areas: | Physical Sciences > Electronic, Optical and Magnetic Materials
Physical Sciences > Condensed Matter Physics Physical Sciences > Electrical and Electronic Engineering |
| Language: | English |
| Date: | April 2009 |
| Deposited On: | 24 Apr 2009 15:20 |
| Last Modified: | 26 Jun 2022 14:42 |
| Publisher: | Elsevier |
| ISSN: | 0921-4526 |
| OA Status: | Closed |
| Publisher DOI: | https://doi.org/10.1016/j.physb.2008.11.148 |
Eshchenko, D G