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Characterization of irradiated RD53A pixel modules with passive CMOS sensors


Jofrehei, A; Backhaus, M; Baertschi, P; Canelli, F; Glessgen, F; Jin, W; Kilminster, B; Macchiolo, A; Reimers, A; Ristic, B; Wallny, R (2022). Characterization of irradiated RD53A pixel modules with passive CMOS sensors. Journal of Instrumentation, 17(09):C09004.

Abstract

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150 nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of 25 × 100 μm$^{2}$ in case of DC coupled devices and 50 × 50 μm$^{2}$ for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to



.

Abstract

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150 nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of 25 × 100 μm$^{2}$ in case of DC coupled devices and 50 × 50 μm$^{2}$ for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to



.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Scopus Subject Areas:Physical Sciences > Instrumentation
Physical Sciences > Mathematical Physics
Uncontrolled Keywords:Mathematical Physics, Instrumentation
Language:English
Date:1 September 2022
Deposited On:17 Feb 2023 10:15
Last Modified:28 Jun 2024 01:42
Publisher:IOP Publishing
ISSN:1748-0221
OA Status:Hybrid
Publisher DOI:https://doi.org/10.1088/1748-0221/17/09/c09004
  • Content: Published Version
  • Language: English
  • Licence: Creative Commons: Attribution 4.0 International (CC BY 4.0)