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Efficiency of electron doping to monolayer hexagonal boron nitride by alkali metals


Ichinokura, S; Hemmi, Adrian; Cun, Huanyao; Tanaka, K; Shimizu, R; Hitosugi, T; Greber, Thomas; Hirahara, T (2023). Efficiency of electron doping to monolayer hexagonal boron nitride by alkali metals. Applied Physics Letters, 122(7):071601.

Abstract

We investigated electron doping of monolayer hexagonal boron nitride (hBN) on metallic substrates by doping alkali metals (AMs). The valence band maximum (VBM) of hBN/Rh after doping with Li and Cs was directly observed using angle-resolved photoemission spectroscopy in a wide wavenumber space. The valence band shift resulting from doping confirms the vacuum level alignment model. Furthermore, when the same AM is used, the resultant binding energy of VBM was almost identical regardless of the substrate, even if it differs by eV before doping, which we found by comparison with the literature. This independence from the substrate is explained by an extension of the vacuum level alignment model, wherein the VBM is determined by the work function of the AM when it intercalates to the interface as well as adsorbs on surfaces of hBN. It means that the doping of Cs, which has the lowest work function, gives the deepest binding energy at VBM. This is evaluated as 5.7 eV in our experiments.

Abstract

We investigated electron doping of monolayer hexagonal boron nitride (hBN) on metallic substrates by doping alkali metals (AMs). The valence band maximum (VBM) of hBN/Rh after doping with Li and Cs was directly observed using angle-resolved photoemission spectroscopy in a wide wavenumber space. The valence band shift resulting from doping confirms the vacuum level alignment model. Furthermore, when the same AM is used, the resultant binding energy of VBM was almost identical regardless of the substrate, even if it differs by eV before doping, which we found by comparison with the literature. This independence from the substrate is explained by an extension of the vacuum level alignment model, wherein the VBM is determined by the work function of the AM when it intercalates to the interface as well as adsorbs on surfaces of hBN. It means that the doping of Cs, which has the lowest work function, gives the deepest binding energy at VBM. This is evaluated as 5.7 eV in our experiments.

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Additional indexing

Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Physics Institute
Dewey Decimal Classification:530 Physics
Scopus Subject Areas:Physical Sciences > Physics and Astronomy (miscellaneous)
Language:English
Date:14 February 2023
Deposited On:24 Nov 2023 08:31
Last Modified:29 Jun 2024 01:40
Publisher:American Institute of Physics
ISSN:1077-3118
Additional Information:Copyright (2023) AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 13 February 2023; 122 (7): 071601 and may be found at https://doi.org/10.1063/5.0140074
OA Status:Green
Publisher DOI:https://doi.org/10.1063/5.0140074
  • Content: Published Version
  • Language: English