Header

UZH-Logo

Maintenance Infos

Impedance spectroscopy of Sb$_2$Se$_3$ photovoltaics consisting of (Sb$_4$Se$_6$)$_n$ nanoribbons under light illumination


Park, Jaemin; Shalvey, Thomas P; Moehl, Thomas; Woo, Kyoohee; Major, Jonathan D; Tilley, S David; Yang, Wooseok (2023). Impedance spectroscopy of Sb$_2$Se$_3$ photovoltaics consisting of (Sb$_4$Se$_6$)$_n$ nanoribbons under light illumination. Nanoscale, 15(48):19757-19766.

Abstract

Sb$_2$Se$_3$, consisting of one-dimensional (Sb$_4$Se$_6$)$_n$ nanoribbons has drawn attention as an intriguing light absorber from the photovoltaics (PVs) research community. However, further research is required on the performance-limiting factors in Sb$_2$Se$_3$ PVs. In this study, we investigated the charge carrier behavior in Sb$_2$Se$_3$ PVs by impedance spectroscopy (IS) under light illumination. (Sb$_4$Se$_6$)$_n$ nanoribbons with two different orientations were used to investigate the effect of crystal orientation on the device performance. Regardless of the (Sb$_4$Se$_6$)$_n$ orientation, negative capacitance was observed at forward bias, representing a recombination pathway at the TiO$_2$/Sb$_2$Se$_3$ interface. A comparison of the recombination resistances and lifetimes of two different Sb$_2$Se$_3$ PVs showed that a better interface could be formed by placing the (Sb$_4$Se$_6$)$_n$ ribbons parallel to the TiO$_2$ layer. Based on these observations, an ideal structure of the Sb$_2$Se$_3$/TiO$_2$ interface is proposed, which will enhance the performance of Sb$_2$Se$_3$ PVs toward its theoretical limit.

Abstract

Sb$_2$Se$_3$, consisting of one-dimensional (Sb$_4$Se$_6$)$_n$ nanoribbons has drawn attention as an intriguing light absorber from the photovoltaics (PVs) research community. However, further research is required on the performance-limiting factors in Sb$_2$Se$_3$ PVs. In this study, we investigated the charge carrier behavior in Sb$_2$Se$_3$ PVs by impedance spectroscopy (IS) under light illumination. (Sb$_4$Se$_6$)$_n$ nanoribbons with two different orientations were used to investigate the effect of crystal orientation on the device performance. Regardless of the (Sb$_4$Se$_6$)$_n$ orientation, negative capacitance was observed at forward bias, representing a recombination pathway at the TiO$_2$/Sb$_2$Se$_3$ interface. A comparison of the recombination resistances and lifetimes of two different Sb$_2$Se$_3$ PVs showed that a better interface could be formed by placing the (Sb$_4$Se$_6$)$_n$ ribbons parallel to the TiO$_2$ layer. Based on these observations, an ideal structure of the Sb$_2$Se$_3$/TiO$_2$ interface is proposed, which will enhance the performance of Sb$_2$Se$_3$ PVs toward its theoretical limit.

Statistics

Citations

Dimensions.ai Metrics

Altmetrics

Downloads

0 downloads since deposited on 20 Feb 2024
0 downloads since 12 months

Additional indexing

Other titles:Impedance spectroscopy of Sb2Se3 photovoltaics consisting of (Sb4Se6)n nanoribbons under light illumination
Item Type:Journal Article, refereed, original work
Communities & Collections:07 Faculty of Science > Department of Chemistry
08 Research Priority Programs > Solar Light to Chemical Energy Conversion
Dewey Decimal Classification:540 Chemistry
Scopus Subject Areas:Physical Sciences > General Materials Science
Uncontrolled Keywords:General Materials Science
Language:English
Date:1 January 2023
Deposited On:20 Feb 2024 08:42
Last Modified:31 Mar 2024 01:40
Publisher:Royal Society of Chemistry
ISSN:2040-3364
OA Status:Closed
Free access at:Publisher DOI. An embargo period may apply.
Publisher DOI:https://doi.org/10.1039/d3nr04082h
PubMed ID:38050427